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PSMN1R6-30PL,127 Images
- Manufacturer: NXP
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: TO-220AB
- Description: POWER FIELD-EFFECT TRANSISTOR, 1
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PSMN1R6-30PL,127 Specifications:
- MfrPart.: PSMN1R6-30PL,127
- Mfr: NXP USA Inc.
- Description: POWER FIELD-EFFECT TRANSISTOR, 1
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tube
- Series: -
- PartStatus: Active
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 30 V
- Current-ContinuousDrain(Id)@25°C: 100A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10V
- RdsOn(Max)@IdVgs: 1.7mOhm @ 25A, 10V
- Vgs(th)(Max)@Id: 2.15V @ 1mA
- GateCharge(Qg)(Max)@Vgs: 212 nC @ 10 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 12.493 pF @ 12 V
- FETFeature: -
- PowerDissipation(Max): 306W (Tc)
- OperatingTemperature: -55°C ~ 175°C (TJ)
- MountingType: Through Hole
- SupplierDevicePackage: TO-220AB
- PSMN1R6-30PL,127 NXP, POWER FIELD-EFFECT TRANSISTOR, 1, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
PSMN1R6-30PL,127, NXP authentic parts in stock from NXP authorized distributors, order today, can ship immediately.
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