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PSMN013-100ES,127 Images
- Manufacturer: NXP
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: I2PAK
- Description: POWER FIELD-EFFECT TRANSISTOR, 6
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PSMN013-100ES,127 Specifications:
- MfrPart.: PSMN013-100ES,127
- Mfr: NXP USA Inc.
- Description: POWER FIELD-EFFECT TRANSISTOR, 6
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tube
- Series: -
- PartStatus: Active
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 100 V
- Current-ContinuousDrain(Id)@25°C: 68A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 10V
- RdsOn(Max)@IdVgs: 13.9mOhm @ 15A, 10V
- Vgs(th)(Max)@Id: 4V @ 1mA
- GateCharge(Qg)(Max)@Vgs: 59 nC @ 10 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 3.195 pF @ 50 V
- FETFeature: -
- PowerDissipation(Max): 170W (Tc)
- OperatingTemperature: -55°C ~ 175°C (TJ)
- MountingType: Through Hole
- SupplierDevicePackage: I2PAK
- PSMN013-100ES,127 NXP, POWER FIELD-EFFECT TRANSISTOR, 6, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
PSMN013-100ES,127, NXP authentic parts in stock from NXP authorized distributors, order today, can ship immediately.
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