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PMZB370UNE,315 Images
- Manufacturer: NXP
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: DFN1006B-3
- Description: EFFECT TRANSISTOR, 0.9A I(D), 30
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PMZB370UNE,315 Specifications:
- MfrPart.: PMZB370UNE,315
- Mfr: NXP USA Inc.
- Description: EFFECT TRANSISTOR, 0.9A I(D), 30
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Bulk
- Series: -
- PartStatus: Active
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 30 V
- Current-ContinuousDrain(Id)@25°C: 900mA (Ta)
- DriveVoltage(MaxRdsOnMinRdsOn): 1.8V, 4.5V
- RdsOn(Max)@IdVgs: 490mOhm @ 500mA, 4.5V
- Vgs(th)(Max)@Id: 1.05V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 1.16 nC @ 15 V
- Vgs(Max): ±8V
- InputCapacitance(Ciss)(Max)@Vds: 78 pF @ 25 V
- FETFeature: -
- PowerDissipation(Max): 360mW (Ta), 2.7W (Tc)
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: DFN1006B-3
- PMZB370UNE,315 NXP, EFFECT TRANSISTOR, 0.9A I(D), 30, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
PMZB370UNE,315, NXP authentic parts in stock from NXP authorized distributors, order today, can ship immediately.
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