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PMDPB38UNE,115 Images
- Manufacturer: NXP
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays Package/Case: 6-UDFN Exposed Pad
- Description: MOSFET 2N-CH 20V 4A HUSON6
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PMDPB38UNE,115 Specifications:
- MfrPart.: PMDPB38UNE,115
- Mfr: NXP USA Inc.
- Description: MOSFET 2N-CH 20V 4A HUSON6
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: -
- PartStatus: Obsolete
- FETType: 2 N-Channel (Dual)
- FETFeature: Logic Level Gate
- DraintoSourceVoltage(Vdss): 20V
- Current-ContinuousDrain(Id)@25°C: 4A
- RdsOn(Max)@IdVgs: 46mOhm @ 3A, 4.5V
- Vgs(th)(Max)@Id: 1V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 4.4nC @ 4.5V
- InputCapacitance(Ciss)(Max)@Vds: 268pF @ 10V
- Power-Max: 510mW
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- Package/Case: 6-UDFN Exposed Pad
- PMDPB38UNE,115 NXP, MOSFET 2N-CH 20V 4A HUSON6, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
PMDPB38UNE,115, NXP authentic parts in stock from NXP authorized distributors, order today, can ship immediately.
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