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PHT6N06LT,135 Images
- Manufacturer: NXP
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: SOT-223
- Description: POWER FIELD-EFFECT TRANSISTOR, 2
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PHT6N06LT,135 Specifications:
- MfrPart.: PHT6N06LT,135
- Mfr: NXP USA Inc.
- Description: POWER FIELD-EFFECT TRANSISTOR, 2
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Bulk
- Series: TrenchMOS™
- PartStatus: Active
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 55 V
- Current-ContinuousDrain(Id)@25°C: 2.5A (Ta)
- DriveVoltage(MaxRdsOnMinRdsOn): 5V
- RdsOn(Max)@IdVgs: 150mOhm @ 5A, 5V
- Vgs(th)(Max)@Id: 2V @ 1mA
- GateCharge(Qg)(Max)@Vgs: 4.5 nC @ 5 V
- Vgs(Max): ±13V
- InputCapacitance(Ciss)(Max)@Vds: 330 pF @ 25 V
- FETFeature: -
- PowerDissipation(Max): 1.8W (Ta), 8.3W (Tc)
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: SOT-223
- PHT6N06LT,135 NXP, POWER FIELD-EFFECT TRANSISTOR, 2, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
PHT6N06LT,135, NXP authentic parts in stock from NXP authorized distributors, order today, can ship immediately.
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