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PHK12NQ03LT,518 Images
- Manufacturer: NXP
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: 8-SO
- Description: POWER FIELD-EFFECT TRANSISTOR, 1
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PHK12NQ03LT,518 Specifications:
- MfrPart.: PHK12NQ03LT,518
- Mfr: NXP USA Inc.
- Description: POWER FIELD-EFFECT TRANSISTOR, 1
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Bulk
- Series: TrenchMOS™
- PartStatus: Active
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 30 V
- Current-ContinuousDrain(Id)@25°C: 11.8A (Tj)
- DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10V
- RdsOn(Max)@IdVgs: 10.5mOhm @ 12A, 10V
- Vgs(th)(Max)@Id: 2V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 17.6 nC @ 5 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 1.335 pF @ 16 V
- FETFeature: -
- PowerDissipation(Max): 2.5W (Ta)
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: 8-SO
- PHK12NQ03LT,518 NXP, POWER FIELD-EFFECT TRANSISTOR, 1, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
PHK12NQ03LT,518, NXP authentic parts in stock from NXP authorized distributors, order today, can ship immediately.
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