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PH8230E,115 NXP POWER FIELD-EFFECT TRANSISTOR, 6
PH8230E,115 Images
PH8230E,115 Images
  • Manufacturer: NXP
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: LFPAK56, Power-SO8
  • Description: POWER FIELD-EFFECT TRANSISTOR, 6
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Download Datasheet (PDF)
PH8230E,115 Datasheet
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PH8230E,115 Specifications:
  • MfrPart.: PH8230E,115
  • Mfr: NXP USA Inc.
  • Description: POWER FIELD-EFFECT TRANSISTOR, 6
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Bulk
  • Series: -
  • PartStatus: Active
  • FETType: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 30 V
  • Current-ContinuousDrain(Id)@25°C: 67A (Tc)
  • DriveVoltage(MaxRdsOnMinRdsOn): -
  • RdsOn(Max)@IdVgs: 8.2mOhm @ 10A, 10V
  • Vgs(th)(Max)@Id: 2.5V @ 1mA
  • GateCharge(Qg)(Max)@Vgs: 14 nC @ 5 V
  • Vgs(Max): -
  • InputCapacitance(Ciss)(Max)@Vds: 1400 pF @ 10 V
  • FETFeature: -
  • PowerDissipation(Max): -
  • OperatingTemperature: -
  • MountingType: Surface Mount
  • SupplierDevicePackage: LFPAK56, Power-SO8
  • PH8230E,115 NXP, POWER FIELD-EFFECT TRANSISTOR, 6, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
PH8230E,115, NXP authentic parts in stock from NXP authorized distributors, order today, can ship immediately.
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