- Manufacturer: NXP
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: LFPAK56, Power-SO8
- Description: POWER FIELD-EFFECT TRANSISTOR, 6
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PH8230E,115 Specifications:
- MfrPart.: PH8230E,115
- Mfr: NXP USA Inc.
- Description: POWER FIELD-EFFECT TRANSISTOR, 6
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Bulk
- Series: -
- PartStatus: Active
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 30 V
- Current-ContinuousDrain(Id)@25°C: 67A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): -
- RdsOn(Max)@IdVgs: 8.2mOhm @ 10A, 10V
- Vgs(th)(Max)@Id: 2.5V @ 1mA
- GateCharge(Qg)(Max)@Vgs: 14 nC @ 5 V
- Vgs(Max): -
- InputCapacitance(Ciss)(Max)@Vds: 1400 pF @ 10 V
- FETFeature: -
- PowerDissipation(Max): -
- OperatingTemperature: -
- MountingType: Surface Mount
- SupplierDevicePackage: LFPAK56, Power-SO8
- PH8230E,115 NXP, POWER FIELD-EFFECT TRANSISTOR, 6, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
PH8230E,115, NXP authentic parts in stock from NXP authorized distributors, order today, can ship immediately.
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