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PDTB143EQA147 Images
- Manufacturer: NXP
- Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, Pre-Biased Package/Case: 3-XDFN Exposed Pad
- Description: PDTB143EQA SMALL SIGNAL FET
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PDTB143EQA147 Specifications:
- MfrPart.: PDTB143EQA147
- Mfr: NXP USA Inc.
- Description: PDTB143EQA SMALL SIGNAL FET
- Product Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, Pre-Biased
- Package: Bulk
- Series: PDTB143
- PartStatus: Active
- TransistorType: PNP - Pre-Biased
- Current-Collector(Ic)(Max): 500 mA
- Voltage-CollectorEmitterBreakdown(Max): 50 V
- Resistor-Base(R1): 4.7 kOhms
- Resistor-EmitterBase(R2): 4.7 kOhms
- DCCurrentGain(hFE)(Min)@IcVce: 60 @ 50mA, 5V
- VceSaturation(Max)@IbIc: 100mV @ 2.5mA, 50mA
- Current-CollectorCutoff(Max): 500nA
- Frequency-Transition: 150 MHz
- Power-Max: 325 mW
- MountingType: Surface Mount
- Package/Case: 3-XDFN Exposed Pad
- PDTB143EQA147 NXP, PDTB143EQA SMALL SIGNAL FET, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, Pre-Biased
PDTB143EQA147, NXP authentic parts in stock from NXP authorized distributors, order today, can ship immediately.
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