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MHT1004GNR3 NXP RF POWER FIELD-EFFECT TRANSISTOR
MHT1004GNR3 Images
MHT1004GNR3 Images
MHT1004GNR3
  • Manufacturer: NXP
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - RF Package/Case: OM-780-2G
  • Description: RF POWER FIELD-EFFECT TRANSISTOR
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Download Datasheet (PDF)
MHT1004GNR3 Datasheet
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MHT1004GNR3 Specifications:
  • MfrPart.: MHT1004GNR3
  • Mfr: Freescale Semiconductor (Now Part of NXP)
  • Description: RF POWER FIELD-EFFECT TRANSISTOR
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - RF
  • Package: Bulk
  • Series: -
  • PartStatus: Obsolete
  • TransistorType: LDMOS
  • Frequency: 2.45GHz
  • Gain: 15.2dB
  • Voltage-Test: 32 V
  • CurrentRating(Amps): 10µA
  • NoiseFigure: -
  • Current-Test: 100 mA
  • Power-Output: 280W
  • Voltage-Rated: 65 V
  • Package/Case: OM-780-2G
  • MHT1004GNR3 NXP, RF POWER FIELD-EFFECT TRANSISTOR, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - RF
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MHT1004GNR3, NXP authentic parts in stock from NXP authorized distributors, order today, can ship immediately.
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