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BUK7E4R0-80E,127 Images
- Manufacturer: NXP
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: I2PAK
- Description: MOSFET N-CH 80V 120A I2PAK
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BUK7E4R0-80E,127 Specifications:
- MfrPart.: BUK7E4R0-80E,127
- Mfr: NXP USA Inc.
- Description: MOSFET N-CH 80V 120A I2PAK
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tube
- Series: TrenchMOS™
- PartStatus: Obsolete
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 80 V
- Current-ContinuousDrain(Id)@25°C: 120A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 10V
- RdsOn(Max)@IdVgs: 4mOhm @ 25A, 10V
- Vgs(th)(Max)@Id: 4V @ 1mA
- GateCharge(Qg)(Max)@Vgs: 169 nC @ 10 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 12030 pF @ 25 V
- FETFeature: -
- PowerDissipation(Max): 349W (Tc)
- OperatingTemperature: -55°C ~ 175°C (TJ)
- MountingType: Through Hole
- SupplierDevicePackage: I2PAK
- BUK7E4R0-80E,127 NXP, MOSFET N-CH 80V 120A I2PAK, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
BUK7E4R0-80E,127, NXP authentic parts in stock from NXP authorized distributors, order today, can ship immediately.
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