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BUK653R5-55C,127 Images
- Manufacturer: NXP
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: Through Hole
- Description: PFET, 120A I(D), 55V, 0.0055OHM
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BUK653R5-55C,127 Specifications:
- MfrPart.: BUK653R5-55C,127
- Mfr: NXP USA Inc.
- Description: PFET, 120A I(D), 55V, 0.0055OHM
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: 262
- Series: Tube
- PartStatus: TrenchMOS™
- FETType: Active
- Technology: N-Channel
- DraintoSourceVoltage(Vdss): MOSFET (Metal Oxide)
- Current-ContinuousDrain(Id)@25°C: 55 V
- DriveVoltage(MaxRdsOnMinRdsOn): 120A (Tc)
- RdsOn(Max)@IdVgs: 4.5V, 10V
- Vgs(th)(Max)@Id: 3.9mOhm @ 25A, 10V
- GateCharge(Qg)(Max)@Vgs: 2.8V @ 1mA
- Vgs(Max): 191 nC @ 10 V
- InputCapacitance(Ciss)(Max)@Vds: ±16V
- FETFeature: 11.516 pF @ 25 V
- PowerDissipation(Max): -
- OperatingTemperature: 263W (Tc)
- MountingType: -55°C ~ 175°C (TJ)
- SupplierDevicePackage: Through Hole
- BUK653R5-55C,127 NXP, PFET, 120A I(D), 55V, 0.0055OHM, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
BUK653R5-55C,127, NXP authentic parts in stock from NXP authorized distributors, order today, can ship immediately.
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