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BUK652R1-30C,127 Images
- Manufacturer: NXP
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: Through Hole
- Description: PFET, 120A I(D), 30V, 0.0035OHM
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BUK652R1-30C,127 Specifications:
- MfrPart.: BUK652R1-30C,127
- Mfr: NXP USA Inc.
- Description: PFET, 120A I(D), 30V, 0.0035OHM
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: 262
- Series: Tube
- PartStatus: TrenchMOS™
- FETType: Active
- Technology: N-Channel
- DraintoSourceVoltage(Vdss): MOSFET (Metal Oxide)
- Current-ContinuousDrain(Id)@25°C: 30 V
- DriveVoltage(MaxRdsOnMinRdsOn): 120A (Tc)
- RdsOn(Max)@IdVgs: 4.5V, 10V
- Vgs(th)(Max)@Id: 2.4mOhm @ 25A, 10V
- GateCharge(Qg)(Max)@Vgs: 2.8V @ 1mA
- Vgs(Max): 168 nC @ 10 V
- InputCapacitance(Ciss)(Max)@Vds: ±16V
- FETFeature: 10.918 pF @ 25 V
- PowerDissipation(Max): -
- OperatingTemperature: 263W (Tc)
- MountingType: -55°C ~ 175°C (TJ)
- SupplierDevicePackage: Through Hole
- BUK652R1-30C,127 NXP, PFET, 120A I(D), 30V, 0.0035OHM, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
BUK652R1-30C,127, NXP authentic parts in stock from NXP authorized distributors, order today, can ship immediately.
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