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A2G35S200-01SR3 NXP AIRFAST RF POWER GAN TRANSISTOR
A2G35S200-01SR3 Images
A2G35S200-01SR3 Images
A2G35S200-01SR3
  • Manufacturer: NXP
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - RF Package/Case: NI-400S-2S
  • Description: AIRFAST RF POWER GAN TRANSISTOR
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Download Datasheet (PDF)
A2G35S200-01SR3 Datasheet
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A2G35S200-01SR3 Specifications:
  • MfrPart.: A2G35S200-01SR3
  • Mfr: NXP USA Inc.
  • Description: AIRFAST RF POWER GAN TRANSISTOR
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - RF
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: -
  • PartStatus: Active
  • TransistorType: GaN HEMT
  • Frequency: 3.4GHz ~ 3.6GHz
  • Gain: 16.1dB
  • Voltage-Test: 48 V
  • CurrentRating(Amps): -
  • NoiseFigure: -
  • Current-Test: 291 mA
  • Power-Output: 180W
  • Voltage-Rated: 125 V
  • Package/Case: NI-400S-2S
  • A2G35S200-01SR3 NXP, AIRFAST RF POWER GAN TRANSISTOR, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - RF
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A2G35S200-01SR3, NXP authentic parts in stock from NXP authorized distributors, order today, can ship immediately.
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